A UV-emitting and -sensing device from ZnGa2O4 oxide layer in metal-oxide-semiconductor structure
Source abstract
Abstract
The ultraviolet (UV) spectrum is considered a harmful light yet useful with the correct amount of exposure for industrial and academic applications. Herein, a dual-mode device, ultraviolet-A (UV-A) emitting and solar-blind UV photo-detecting, was fabricated using a ZnGa2O4 (ZGO) in a metal-oxide-semiconductor (MOS) structure. The ZGO film was deposited on the p+-Si substrate through a facile one-step annealing all-solution precursor process. The strategy to achieve bi-functionality was demonstrated by changing the electric configurations. Under a sinusoidal AC power, it emits broad UV-A light, which is optically referred to as the impact excitation of holes and electrons within the ZGO lattice. However, under UV irradiation, it presents a decent photo-current response with an acceptable UV/visible rejection ratio and a millisecond response with the help of an external electric field from DC bias voltage. Our work could provide a feasible method for developing multifunctional electronic devices based on MOS structure.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (34)
Show source-provided references
1. High performance optoelectronic device based on semitransparent organic photovoltaic cell integrated with light-emitting diode10.1016/j.orgel.2011.05.012 ↗
2. Multifunctional mechanical sensing electronic device based on triboelectric anisotropic crumpled nanofibrous mats10.1021/acsami.1c18449 ↗
3. Multifunctional device based on phosphor-piezoelectric PZT:lighting, speaking, and mechanical energy harvesting10.1038/s41598-017-18571-9 ↗
4. Efficiency improvement of organic bifunctional devices by applying omnidirectional antireflection nanopillars10.1039/c3ra46936k ↗
5. Electroluminescence and photo-response of inorganic halide perovskite bi-functional diodes10.1515/nanoph-2018-0149 ↗
6. Integrated organic blue LED and visible-blind UV photodetector10.1021/jp110381h ↗
7. High performance organic integrated device with ultraviolet photodetective and electroluminescent properties consisting of a charge-transfer-featured naphthalimide derivative
8. High performance organic ultraviolet photodetector with efficient electroluminescence realized by a thermally activated delayed fluorescence emitter
9. Epitaxial growth of ZnGa2O4: a new, deep ultraviolet semiconductor candidate10.1021/acs.cgd.7b01159 ↗
10. Self-powered solar-blind ZnGa2O4 UV photodetector with ultra-fast response speed10.1016/j.sna.2020.112354 ↗
11. The effect of annealing ambience on the material and photodetector characteristics of sputtered ZnGa2O4 films10.3390/nano11092316 ↗
12. Color modification of ZnGa2O4:Yb3+, Er3+, Tm3+ upconversion phosphors with the doping of Sn4+ and Ge4+ ions10.1364/AO.399519 ↗
13. ZnGa2O4 deep-ultraviolet photodetector based on Si substrate10.1016/j.matlet.2020.128805 ↗
14. Performance enhancement of a self-powered solar-blind UV photodetector based on ZnGa2O4/Si heterojunction via interface pyroelectric effect10.1063/5.0049747 ↗
15. AC-driven ultraviolet-B electroluminescence from Gd3+-doped ZnGa2O4 film on SiOx/silicon substrate10.1109/LED.2022.3182477 ↗
16. High-luminance green-emitting thin-film electroluminescent devices using ZnGa2O4:Mn phosphor10.1143/JJAP.34.L684 ↗
17. Red ZnGa2O4:Cr3+ powder electroluminescence co-generating sounds with a longer lifetime and no thermal quenching behaviors10.1016/j.jlumin.2021.118475 ↗
18. Color variation of ZnGa2O4 phosphor by reduction-oxidation processes10.1063/1.1564632 ↗
19. The origin of emission color of reduced and oxidized ZnGa2O4 phosphors10.1016/j.ssc.2003.09.032 ↗
20. Defect related luminescence in silicon dioxide network: a review
21. Influence of annealing temperature on the properties of ZnGa2O4 thin films by magnetron sputtering10.3390/coatings9120859 ↗
22. Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition10.1016/j.matlet.2018.11.012 ↗
23. The effect of oxygen partial pressure and annealing process on the characteristics of ZnGa2O4 MSM UV photodetector10.1149/2.0371907jss ↗
24. Blue photoluminescence in ZnGa2O4 thin-film phosphors10.1063/1.1287228 ↗
25. Effect of joule heating on electrokinetic transport10.1002/elps.200700601 ↗
26. Ono · 1995 · vol. 1
27. Electroluminescence properties of the Gd3+ ultraviolet luminescent centers in SiO2 gate oxide layers10.1063/1.2197247 ↗
28. AC-driven ultraviolet-C electroluminescence from an all-solution-processed CaSiO3:Pr3+ thin film based on a metal-oxide-semiconductor structure10.1002/admi.202200248 ↗
29. Refractive index and dielectric constant of SiOx films deposited by reactive sputtering
30. Synthesis, microstructure, and microwave dielectric properties of ZnGa2O4 ceramics10.1111/jace.12331 ↗
31. Deep-ultraviolet Schottky photodetectors with high deep-ultraviolet/visible rejection based on a ZnGa2O4 thin film10.1016/j.apsusc.2019.143670 ↗
32. Fast and sensitive solution-processed visible-blind perovskite UV photodetectors10.1002/adma.201601196 ↗
33. High-performing self-driven ultraviolet photodetector by TiO2/Co3O4 photovoltaics10.1016/j.jallcom.2020.154376 ↗
34. Flexible transparent photovoltaics for ultra-UV photodetection and functional UV-shielding based on Ga2O3/Cu2O heterojunction