Investigating the optoelectronic device performance of p-Si/WO 3 /Ag sandwich structure
Source abstract
Abstract
The electrical and photoelectrical properties of a p-Si/WO 3 /Ag sandwich structure fabricated utilizing radio frequency (RF) sputtering of WO 3 thin films were investigated. A comprehensive analysis of the surface morphology, structural, and optical characteristics of the WO 3 thin films was performed. The findings demonstrated that the RF-sputtered WO 3 thin films with smooth and uniform surface morphology are well-applicable in large-area applications. The WO 3 thin films exhibited well-crystallized structures with a 2.92 eV optical band gap, indicating their suitability for optoelectronic applications. Current-voltage and current-time measurements in the dark and under various illumination conditions were used to evaluate the optoelectronic performance of the p-Si/WO 3 /Ag sandwich structure. The electrical and optoelectronic parameters, including ideality factor, barrier height, series resistance, and photosensitive were calculated. The results showed that the p-Si/WO 3 /Ag sandwich-type device obtained using RF sputtered WO 3 thin film demonstrates remarkable rectification properties, highlighting its potential for use in photodiodes and optoelectronic devices.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Transition Metal Oxide Nanomaterials · Semiconductor materials and interfaces · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, Al-Zaytoonah University of Jordan, Amman, Jordan
Department of Physics and Engineering Physics, Morgan State University, Baltimore, MD, USA
Nanotechnology Institute, Jordan University of Science & Technology, Irbid, Jordan
Low Dimensional Materials Research Center, Department of Physics, University of Malaya, Malaysia
Funding
Deanship of Research, Jordan University of Science and Technology
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