journal article·2025-08

High-temperature stability of Hf0.5Zr0.5O2-based ferroelectric memory devices

Hongdi Wu, Boxu Yan, Gang Bai, Wenbin Tang, Guodong Zhang, Yecheng Ding, Xubing Lu, Zhibo Yan, Jun-Ming Liu, Guoliang Yuan

Acta Materialia· Volume 294
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Ferroelectric and Negative Capacitance Devices · MXene and MAX Phase Materials · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (37)

Show source-provided references
1. Ferroelectric hafnium oxide based materials and devices: assessment of current status and future prospects10.1149/2.0081505jss ↗
2. Enhanced ferroelectricity in ultrathin films grown directly on silicon10.1038/s41586-020-2208-x ↗
3. Ferroelectricity in hafnium oxide thin films10.1063/1.3634052 ↗
4. Highly enhanced polarization switching speed in HfO2-based ferroelectric thin films via a composition gradient strategy10.1002/adfm.202301746 ↗
5. A robust high-performance electronic synapse based on epitaxial ferroelectric Hf0.5Zr0.5O2 films with uniform polarization and high Curie temperature
6. A stable rhombohedral phase in ferroelectric Hf(Zr)1+xO2 capacitor with ultralow coercive field10.1126/science.adf6137 ↗
7. Intrinsic ferroelectricity in Y-doped HfO2 thin films10.1038/s41563-022-01282-6 ↗
8. HfO2-ZrO2 superlattice ferroelectric capacitor with improved endurance performance and higher fatigue recovery capability10.1109/LED.2021.3135961 ↗
9. Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film10.1038/s41467-022-28236-5 ↗
10. First experimental demonstration of robust HZO/β-ga₂o₃ ferroelectric field-effect transistors as synaptic devices for artificial intelligence applications in a high-temperature environment10.1109/TED.2021.3064783 ↗
11. Polarization enhancement in Hf0.5Zr0.5O2 capacitors induced by oxygen vacancies at elevated temperatures10.1063/5.0137776 ↗
12. First demonstration of a design methodology for highly reliable operation at high temperature on 128kb 1T1C FeRAM chip
13. Stable ferroelectric properties of Hf0.5Zr0.5O2 thin films within a broad working temperature range10.7567/1347-4065/ab3844 ↗
14. Highly stable performance of flexible Hf0.6Zr0.4O2 ferroelectric thin films under multi-service conditions10.1039/C9TC05157K ↗
15. Temperature dependent polarization-switching behavior in Hf0.5Zr0.5O2 ferroelectric film10.1016/j.mtla.2020.100919 ↗
16. Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition10.1039/C6CP07501K ↗
17. Growth of the orthorhombic phase and inhibition of charge injection in ferroelectric HfO2-based MFIS memory devices with a high-permittivity dielectric seed layer10.1007/s40843-022-2124-7 ↗
18. Impact of monolayer engineering on ferroelectricity of sub-5 nm Hf0.5Zr0.5O2 thin films10.1016/j.actamat.2023.118848 ↗
19. Sub-picosecond processes of ferroelectric domain switching from field and temperature experiments10.1002/adfm.201101521 ↗
20. Size-scaling effect on domain switching time and coercive field of TiN/Hf0.5Zr0.5O2/TiN thin-film capacitors10.1109/TED.2023.3325417 ↗
21. Modeling fatigue-breakdown dilemma in ferroelectric Hf0.5Zr0.5O2 and optimized programming strategies
22. Evolution of the interfacial layer and its impact on electric-field-cycling behaviors in ferroelectric Hf1–xZrxO210.1021/acsami.1c22426 ↗
23. Microstructural evolution and ferroelectricity in HfO2 films
24. Physical mechanisms behind the field-cycling behavior of HfO2-based ferroelectric capacitors10.1002/adfm.201600590 ↗
25. Local phase decomposition as a cause of polarization fatigue in ferroelectric thin films10.1103/PhysRevLett.97.177601 ↗
26. Physical origin of the endurance improvement for HfO2-ZrO2 superlattice ferroelectric film10.1063/5.0127136 ↗
27. Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices10.1126/science.abf3789 ↗
28. 105× endurance improvement of FE-HZO by an innovative rejuvenation method for 1z node NV-DRAM applications
29. Characterization of fatigue and its recovery behavior in ferroelectric HfZrO
30. Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics10.1007/s12274-021-4047-y ↗
31. Ferroelastically protected reversible orthorhombic to monoclinic-like phase transition in ZrO2 nanocrystals10.1038/s41563-024-01853-9 ↗
32. Positive effect of parasitic monoclinic phase of Hf0.5Zr0.5O2 on ferroelectric endurance10.1002/aelm.202100420 ↗
33. First direct observation of the built-in electric field and oxygen vacancy migration in ferroelectric Hf0.5Zr0.5O2 film during electrical cycling10.1039/D2NR06582G ↗
34. Impact of oxygen vacancy on ferroelectric characteristics and its implication for wake-up and fatigue of HfO2-based thin films10.1109/TED.2022.3190256 ↗
35. Impact of oxygen vacancy on the ferroelectric properties of lanthanum-doped hafnium oxide10.1063/5.0023554 ↗
36. Formation of oxygen vacancy clusters in Li-rich Mn-based cathode materials of lithium-ion batteries: first-principles calculations
37. Oxygen vacancies versus fluorine at CeO2 (111): a case of mistaken identity?10.1103/PhysRevLett.112.156102 ↗