Switching kinetics in ferroelectric zinc magnesium oxide thin films
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Acoustic Wave Resonator Technologies · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (48)
Show source-provided references
1. AlScN: a III-V semiconductor based ferroelectric10.1063/1.5084945 ↗
2. Ferroelectricity in boron-substituted aluminum nitride thin films
3. Ferroelectrics everywhere: ferroelectricity in magnesium substituted zinc oxide thin films10.1063/5.0053755 ↗
4. Fully epitaxial ferroelectric ScGaN grown on GaN by molecular beam epitaxy10.1063/5.0060021 ↗
5. Demonstration of ferroelectricity in ScGaN thin film using sputtering method10.1063/5.0068059 ↗
6. Ferroelectric YAlN grown by molecular beam epitaxy10.1063/5.0159562 ↗
7. A computational search for wurtzite-structured ferroelectrics with low coercive voltages10.1063/5.0023626 ↗
8. Doping of aluminum nitride and the impact on thin film piezoelectric and ferroelectric device performance
9. Impact of piezo-phototronic effect on ZnMgO/Se heterojunction photovoltaic devices10.1016/j.nanoen.2022.107385 ↗
10. Strong electro-optic effect in Mg incorporated ZnO thin films10.1063/5.0103831 ↗
11. Optical and electrical properties of ZnMgO with high Mg content elaborated by ultrasonic spray pyrolysis using water-based solutions
12. Large enhancements in optical and piezoelectric properties in ferroelectric Zn1-xMgxO thin films through engineering electronic and ionic anharmonicities10.1002/apxr.202300003 ↗
13. Enhancement of second-order optical nonlinearities and nanoscale periodic domain patterning in ferroelectric boron-substituted aluminum nitride thin films10.1364/OME.488459 ↗
14. Multi-State, ultra-thin, BEOL-compatible AlScN ferroelectric diodes10.1021/acsnano.4c03541 ↗
15. Perspectives of ferroelectric wurtzite AlScN: material characteristics, preparation, and applications in advanced memory devices10.3390/nano14110986 ↗
16. In-grain ferroelectric switching in sub-5 nm thin Al0.74Sc0.26N films at 1 V10.1002/advs.202302296 ↗
17. A scalable ferroelectric non-volatile memory operating at 600° C10.1038/s41928-024-01148-6 ↗
18. Wake up and retention in zinc magnesium oxide ferroelectric films10.1063/5.0153750 ↗
19. Atomic-scale polarization switching in wurtzite ferroelectrics10.1126/science.adh7670 ↗
20. Demonstration and STEM analysis of ferroelectric switching in MOCVD-grown single crystalline Al0.85Sc0.15N10.1002/apxr.202300113 ↗
21. Switching it up: new mechanisms revealed in wurtzite-type ferroelectrics10.1126/sciadv.adl0848 ↗
22. Baksa, S.M., Gelin, S., Oturak, S., Trolier-McKinstry, S.E., Maria, J.P., Rappe, A.M., & Dabo, I. (2023). Strain fluctuations unlock ferroelectricity in wurtzites. arXiv preprint arXiv:2311.05413.10.1002/aelm.202400567 ↗
23. Anomalously abrupt switching of wurtzite-structured ferroelectrics: simultaneous non-linear nucleation and growth model10.1039/D3MH00365E ↗
24. Polarity effects on wake-up behavior of Al0.94B0.06N ferroelectrics10.1111/jace.19382 ↗
25. The Johnson-Mehl-Avrami-Kolmogorov model: a brief review10.1007/BF03185527 ↗
26. Reaction kinetics in processes of nucleation and growth
27. Non-Kolmogorov-Avrami switching kinetics in ferroelectric thin films10.1103/PhysRevB.66.214109 ↗
28. Domain switching kinetics in disordered ferroelectric thin films10.1103/PhysRevLett.99.267602 ↗
29. Kinetics of N-to M-polar switching in ferroelectric Al1−xScxN capacitors10.1002/advs.202308797 ↗
30. Ferroelectric aluminum scandium nitride transistors with intrinsic switching characteristics and artificial synaptic functions for neuromorphic computing
31. Domain dynamics and resistive switching in ferroelectric Al1–xScxN thin film capacitors10.1002/adfm.202315169 ↗
32. ReaxFF reactive force field for exploring electronically switchable polarization in Zn1–xMgxO ferroelectric semiconductors10.1021/acs.jpcc.4c02233 ↗
33. Lines · 2001
34. NIH image to ImageJ: 25 years of image analysis10.1038/nmeth.2089 ↗
35. High-speed and high-power ferroelectric switching current measurement instrument for materials with large coercive voltage and remanent polarization10.3390/s22249659 ↗
36. Fabrication and properties of p-type K doped Zn1−xMgxO thin film10.1016/j.jallcom.2011.04.047 ↗
37. MgxZn1−xO as a II–VI widegap semiconductor alloy10.1063/1.121384 ↗
38. Comparative study of Mg doped ZnO and multilayer ZnO/MgO thin films10.1016/j.tsf.2003.07.017 ↗
39. Effect of the pressure exerted by probe station tips in the electrical characteristics of memristors10.1002/aelm.201901226 ↗
40. Frequency dependence of wake-up and fatigue characteristics in ferroelectric Al0.93B0.07N thin films10.1016/j.actamat.2024.119678 ↗
41. Role of defects in the breakdown phenomenon of Al1–xScxN: from ferroelectric to filamentary resistive switching10.1021/acs.nanolett.3c02351 ↗
42. Switching kinetics in epitaxial BiFeO3 thin films10.1063/1.3392884 ↗
43. Direct studies of domain switching dynamics in thin film ferroelectric capacitors10.1063/1.2010605 ↗
44. Gelman · 2003
45. Intrinsic defects in ZnO films grown by molecular beam epitaxy10.1143/JJAP.43.2602 ↗
46. Structural and optical properties of Zn1−xMgxO thin films synthesized with metal organic chemical vapor deposition10.1007/s11664-006-0217-7 ↗
47. Domain wall contributions to the properties of piezoelectric thin films10.1007/s10832-007-9001-1 ↗
48. Lateral scaling of Pb (Mg1/3Nb2/3)O3-PbTiO3 thin films for piezoelectric logic applications10.1063/1.4882025 ↗