Impact of monolayer engineering on ferroelectricity of sub-5 nm Hf0.5Zr0.5O2 thin films
Source abstract
Abstract
The sub-5 nm Hf 0.5Zr 0.5O 2 (HZO) thin films have been studied for years; however, they still suffer from challenges including poor ferroelectricity, wake-up effect, and the need for high-temperature annealing. In this paper, the concept and the method of “monolayer engineering” by atomic layer deposition (ALD) are proposed and implemented, which leads to dramatic improvements in the crystallinity and ferroelectricity of the HZO thin film with a thickness of only ∼4 nm at a low annealing temperature of only 370 °C. By substituting one ZrO 2 for one HfO 2 atomic layer, a high ferroelectric remnant polarization ( Pr) ∼15 μC/cm 2 is achieved in the HZO thin film. Moreover, the pronounced ferroelectric characteristics are demonstrated in the pristine state, indicating the nearly wake-up-free property of the HZO layer. This study manifests that the monolayer engineering by ALD enables atomic tailoring to enhance the material and physical properties of nanoscale thin films.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · MXene and MAX Phase Materials · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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