journal article·2019-01-02

Hydrophobic modification of SiO2 surface by aminosilane derivatives

Hidekazu Arase, Keiichi Taniguchi, Takashi Kai, Kazuya Murakami, Yohei Adachi, Yousuke Ooyama, Yoshihito Kunugi, Joji Ohshita

Composite Interfaces· Volume 26· Issue 1
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Abstract

New aminosilanes with hydrolysable Si-N bond(s) were prepared by the amination of chlorosilanes and used as hydrophobic modifiers of SiO2 surface. The aminosilanes are rather stable towards hydrolysis in air compared to their chlorosilane analogs. The modified SiO2 was applied as a gate insulator of an organic thin-film transistor with a vapor-deposited film of pentacene as the active material. The transistor with the aminosilane-modified SiO2 showed two- to threefold higher hole mobility than the device with bare SiO2.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Sensor and Energy Harvesting Materials · Semiconductor materials and devices · Surface Modification and Superhydrophobicity

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, Higashi-Hiroshima, Japan

Department of Applied Chemistry, Faculty of Engineering, Tokai University, Hiratsuka, Japan

References (15)

Show source-provided references
1. Brook MA · 2000
2. Corey JY · 1986
3. Bassindale AR · 1986
4. 10.1016/j.progpolymsci.2013.02.00310.1016/j.progpolymsci.2013.02.003 ↗
5. 10.1021/ja00521a01610.1021/ja00521a016 ↗
6. 10.1021/la00088a03510.1021/la00088a035 ↗
7. 10.1021/la00055a03010.1021/la00055a030 ↗
8. 10.1109/55.64408510.1109/55.644085 ↗
9. 10.1109/16.60547610.1109/16.605476 ↗
10. 10.1063/1.147137810.1063/1.1471378 ↗
11. 10.1021/ja902995710.1021/ja9029957 ↗
12. 10.1002/adma.20160289310.1002/adma.201602893 ↗
13. 10.1063/1.487426310.1063/1.4874263 ↗
14. 10.1002/adfm.v18:910.1002/adfm.v18:9 ↗
15. 10.1021/la000471z10.1021/la000471z ↗