Single photon emission in WSe 2 up 160 K by quantum yield control
Source abstract
Abstract
Abstract 2D semiconductors hosting strain-induced quantum emitters offer unique abilities to achieve scalable architectures for deterministic coupling to nanocavities and waveguides that are required to enable chip-based quantum information processing technologies. A severe drawback remains that exciton emission from quantum emitters in WSe 2 quenches beyond 30 K, which requires cryogenic cooling. Here we demonstrate an approach to increase the temperature survival of exciton quantum emitters in WSe 2 that is based on maximizing the emitter quantum yield. Utilizing optimized material growth that leads to reduced density of nonradiative defects as well as coupling of the exciton emission to plasmonic nanocavities modes, we achieve average quantum yields up to 44%, thermal activation energies up to 92 meV, and single photon emission signatures up to temperatures of 160 K. At these values non-cryogenic cooling with thermo-electric chips becomes already feasible, while quantitative analysis shows that room temperature operation is within reach through active strain engineering.
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Research context
OpenAlex topics: 2D Materials and Applications · Diamond and Carbon-based Materials Research · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (34)
Show source-provided references
1. Material platforms for spin-based photonic quantum technologies10.1038/s41578-018-0008-9 ↗
2. Photon antibunching in the fluorescence of individual color centers in diamond10.1364/OL.25.001294 ↗
3. Bright room temperature single photon source at telecom range in cubic silicon carbide10.1038/s41467-018-07226-6 ↗
4. Scalable quantum photonics with single color centers in silicon carbide10.1021/acs.nanolett.6b05102 ↗
5. Quantum emission from hexagonal boron nitride monolayers10.1038/nnano.2015.242 ↗
6. Localized emission from laser-irradiated defects in 2D hexagonal boron nitride10.1088/2053-1583/aa8e61 ↗
7. Resonant excitation of quantum emitters in hexagonal boron nitride10.1021/acsphotonics.7b00977 ↗
8. Robust solid-state quantum system operating at 800 K10.1021/acsphotonics.7b00086 ↗
9. The nitrogen-vacancy colour centre in diamond10.1016/j.physrep.2013.02.001 ↗
10. Single-photon emission of CdSe quantum dots at temperatures up to 200 K10.1063/1.1515364 ↗
11. A gallium nitride single-photon source operating at 200 K10.1038/nmat1763 ↗
12. Room-temperature triggered single photon emission from a III-nitride site-controlled nanowire quantum dot10.1021/nl404400d ↗
13. Ultrafast room temperature single-photon source from nanowire-quantum dots10.1021/nl300733f ↗
14. Purcell-enhanced quantum yield from carbon nanotube excitons coupled to plasmonic nanocavities10.1038/s41467-017-01777-w ↗
15. Photon antibunching in the photoluminescence spectra of a single carbon nanotube10.1103/PhysRevLett.100.217401 ↗
16. Quantum light signatures and nanosecond spectral diffusion from cavity-embedded carbon nanotubes10.1021/nl204402v ↗
17. Tunable room-temperature single-photon emission at telecom wavelengths from sp3 defects in carbon nanotubes10.1038/nphoton.2017.119 ↗
18. Room-temperature single-photon generation from solitary dopants of carbon nanotubes10.1038/nnano.2015.136 ↗
19. Single quantum emitters in monolayer semiconductors10.1038/nnano.2015.75 ↗
20. Voltage-controlled quantum light from an atomically thin semiconductor10.1038/nnano.2015.79 ↗
21. Single photon emitters in exfoliated WSe2 structures10.1038/nnano.2015.67 ↗
22. Optically active quantum dots in monolayer WSe210.1038/nnano.2015.60 ↗
23. Nanobubble induced formation of quantum emitters in monolayer semiconductors10.1088/2053-1583/aa629d ↗
24. Large-scale quantum-emitter arrays in atomically thin semiconductors10.1038/ncomms15093 ↗
25. Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor10.1038/ncomms15053 ↗
26. Deterministic coupling of site-controlled quantum emitters in monolayer WSe2 to plasmonic nanocavities10.1038/s41565-018-0275-z ↗
27. Phonon induced line broadening and population of the dark exciton in a deeply trapped localized emitter in monolayer WSe210.1364/OE.24.008066 ↗
28. Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained-layer quantum wells10.1063/1.103987 ↗
29. Temperature quenching of photoluminescence intensities in undoped and doped GaN10.1063/1.371242 ↗
30. Hundredfold enhancement of light emission via defect control in monolayer transition-metal dichalcogenides
31. Temperature dependence of the energy gap in semiconductors10.1016/0031-8914(67)90062-6 ↗
32. Excitonic resonances in thin films of WSe2: from monolayer to bulk material10.1039/C5NR01536G ↗
33. Stretching and breaking of ultrathin MoS210.1021/nn203879f ↗
34. Reversible uniaxial strain tuning in atomically thin WSe210.1088/2053-1583/3/2/021011 ↗