Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like thin films: A comparative study and prediction
Source abstract
Abstract
Abstract Hafnium oxide based ferroelectric (FE) and antiferroelectric (AFE) thin films show great potentials in memory and energy related applications, while their successes in commercially available devices depend strongly on detailed characterization and deep understanding of the endurance properties of the materials. In this work, the bipolar field cycling behavior has been investigated in detail for FE and AFE-like Si-doped HfO2 films. Their apparent differences in fatigue and breakdown resistance are interpreted by the modified switching-induced charge-injection model. Referring to the first-order phase transition theory, we summarize and predict the evolution of polarization switching characteristic for FE, AFE-like and AFE Si-doped HfO2 thin films stressed with bipolar field cycling. Additionally, several approaches are suggested to improve the endurance properties of ferroelectric HfO2-based thin films in terms of fabrication process and material design.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · MXene and MAX Phase Materials · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (69)
Show source-provided references
1. Ferroelectricity in hafnium oxide thin films10.1063/1.3634052 ↗
2. Phase transitions in ferroelectric silicon doped hafnium oxide10.1063/1.3636434 ↗
3. Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications10.1063/1.3636417 ↗
4. Development of hafnium based high-k materials—a review10.1016/j.mser.2010.12.001 ↗
5. Integrations and challenges of novel high-k gate stacks in advanced CMOS technology10.1016/j.pmatsci.2011.01.012 ↗
6. An extensive study of the influence of dopants on the ferroelectric properties of HfO210.1039/C6TC04807B ↗
7. Impact of different dopants on the switching properties of ferroelectric hafniumoxide10.7567/JJAP.53.08LE02 ↗
8. Doped hafnium oxide – an enabler for ferroelectric field effect transistors10.4028/www.scientific.net/AST.95.136 ↗
9. Hafnium oxide based CMOS compatible ferroelectric materials10.1149/2.010304jss ↗
10. Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes10.1063/1.4798265 ↗
11. Ferroelectricity in simple binary ZrO2 and HfO210.1021/nl302049k ↗
12. Ferroelectricity in undoped hafnium oxide10.1063/1.4922272 ↗
13. Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition10.1039/C6TC02003H ↗
14. On the structural origins of ferroelectricity in HfO2 thin films10.1063/1.4919135 ↗
15. Pathways towards ferroelectricity in hafnia10.1103/PhysRevB.90.064111 ↗
16. Thin HfxZr1-xO2Films: a new lead-free system for electrostatic supercapacitors with large energy storage density and robust thermal stability10.1002/aenm.201400610 ↗
17. Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment10.1039/C7NR02121F ↗
18. Ferroelectricity in Si-doped HfO2 revealed: a binary lead-free ferroelectric10.1002/adma.201403115 ↗
19. Incipient ferroelectricity in Al-Doped HfO2 thin films10.1002/adfm.201103119 ↗
20. Theory of antiferroelectric crystals10.1103/PhysRev.82.729 ↗
21. The origin of ferroelectricity in Hf1−xZrxO2: a computational investigation and a surface energy model10.1063/1.4916707 ↗
22. Antiferroelectricity in thin-film ZrO2 from first principles10.1103/PhysRevB.90.140103 ↗
23. Effect of Zr content on the wake-up effect in Hf1-xZrxO2 films10.1021/acsami.6b03586 ↗
24. Si doped hafnium oxide-a “fragile” ferroelectric system10.1002/aelm.201700131 ↗
25. Ferroelectric phase transitions in nanoscale HfO2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors10.1016/j.nanoen.2015.10.005 ↗
26. Two-step polarization switching mediated by a nonpolar intermediate phase in Hf0.4Zr0.6O2 thin films10.1039/C5NR08346J ↗
27. Origin of temperature-dependent ferroelectricity in Si-Doped HfO210.1002/aelm.201700489 ↗
28. Ten-nanometer ferroelectric films for next-generation FRAM capacitors10.1109/LED.2012.2204856 ↗
29. Ferroelectric hafnium oxide A Game changer to FRAM?
30. Ferroelectric hafnium oxide: a CMOS-compatible and highly scalable approach to future ferroelectric memories
31. Ferroelectricity and antiferroelectricity of doped thin HfO2-based films10.1002/adma.201404531 ↗
32. Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage10.1063/1.4989908 ↗
33. Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric HfxZr1−xO2 films10.1016/j.nanoen.2014.09.025 ↗
34. Effect of acceptor doping on phase transitions of HfO2 thin films for energy-related applications10.1016/j.nanoen.2017.04.052 ↗
35. Evidence of single domain switching in hafnium oxide based FeFETs: enabler for multi-level FeFET memory cells
36. A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond
37. Nonvolatile random access memory and energy storage based on antiferroelectric like hysteresis in ZrO210.1002/adfm.201603182 ↗
38. How to make DRAM non-volatile? Anti-ferroelectrics: A new paradigm for universal memories
39. Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories
40. Scott · 2000
41. A comprehensive review on the progress of lead zirconate-based antiferroelectric materials10.1016/j.pmatsci.2014.01.002 ↗
42. Improved energy storage performance and fatigue endurance of Sr-Doped PbZrO3 antiferroelectric thin films10.1111/j.1551-2916.2009.03015.x ↗
43. Wake-up effects in Si-doped hafnium oxide ferroelectric thin films10.1063/1.4829064 ↗
44. Complex internal bias fields in ferroelectric hafnium oxide10.1021/acsami.5b05773 ↗
45. Physical mechanisms behind the field-cycling behavior of HfO2-based ferroelectric capacitors10.1002/adfm.201600590 ↗
46. Structural changes underlying field-cycling phenomena in ferroelectric HfO2 thin films10.1002/aelm.201600173 ↗
47. Insights into antiferroelectrics from first-order reversal curves10.1063/1.5003612 ↗
48. Electrical fatigue of ferroelectric PbZr0.5Ti0.5O3 and antiferroelectric PbZrO3 thin films10.1016/S0025-5408(00)00225-7 ↗
49. Electric fatigue in antiferroelectric and ferroelectric Pb (Zr, Sn, Ti) NbO3 thin films prepared by sol-gel process10.1143/JJAP.37.5162 ↗
50. Fatigue as a local phase decomposition: a switching-induced charge-injection model10.1103/PhysRevB.75.224104 ↗
51. Why do antiferroelectrics show higher fatigue resistance than ferroelectrics under bipolar electrical cycling?10.1063/1.3082375 ↗
52. Polarization fatigue in ferroelectric thin films and related materials10.1063/1.3056603 ↗
53. The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films10.1002/pssr.201510270 ↗
54. Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: a first principles insight10.1063/1.4867975 ↗
55. Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films10.1016/j.actamat.2015.07.035 ↗
56. Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics10.1088/0034-4885/61/9/002 ↗
57. Local phase decomposition as a cause of polarization fatigue in ferroelectric thin films10.1103/PhysRevLett.97.177601 ↗
58. Thermochemical description of dielectric breakdown in high dielectric constant materials10.1063/1.1565180 ↗
59. Time dependent dielectric breakdown of amorphous ZrAlxOy high-k dielectric used in dynamic random access memory metal-insulator-metal capacitor10.1063/1.3204001 ↗
60. Large displacement transducers based on electric field forced phase transitions in the tetragonal (Pb0.97La0.02) (Ti,Zr,Sn)O3 family of ceramics10.1063/1.343578 ↗
61. Discrimination between bulk and interface scenarios for the suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)O3 thin films capacitors with Pt electrodes10.1063/1.121386 ↗
62. Polarization fatigue in ferroelectric films: basic experimental findings, phenomenological scenarios, and microscopic features10.1063/1.1381542 ↗
63. Thickness dependence of D.C. leakage current in lead zirconate-titanate (PZT) memories10.1080/00150199208230022 ↗
64. Polarization fatigue characteristics of sol-gel ferroelectric thin-film capacitors10.1143/JJAP.33.3996 ↗
65. The effects of layering in ferroelectric Si-doped HfO2 thin films10.1063/1.4893738 ↗
66. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films10.1063/1.4916715 ↗
67. Reliability characteristics of ferroelectric thin films for memory applications10.1109/TDMR.2012.2216269 ↗
68. Stabilizing the ferroelectric phase in doped hafnium oxide10.1063/1.4927805 ↗
69. Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films10.1016/j.tsf.2012.11.125 ↗