Source abstract
Abstract
Development of hybrid organic–inorganic lead halide perovskites is still hampered by the toxicity of lead and their structural stability in air. Hence, the research of lead-free alternatives is extremely important to promote the development of perovskite-based photovoltaics. Here, we construct lead-free tin (Sn)- and germanium (Ge)- based two-dimensional (2D) hybrid organic–inorganic perovskites, (BA) 2 GeX 4 and (BA) 2 SnX 4 (X = I, Br, and Cl), and explore their geometrical, electronic, and light absorption characteristics via first-principles calculations. The lattice constants will increase from (BA) 2 MCl 4, (BA) 2 MBr 4 to (BA) 2 MI 4 (M = Ge, and Sn), owing to the increase in halogen ionic radius in the order of Cl – (1.81 Å) < Br – (1.96 Å) < I – (2.20 Å). Meanwhile, (BA) 2 GeX 4 materials show less lattice constants by ∼3–4% along a axis and ∼2–4% along b axis, respectively, than those of (BA) 2 SnX 4 materials. Moreover, both the 2D tin and germanium halide perovskites have direct band gaps; (BA) 2 GeX 4 exhibits values of 1.54, 2.10, and 2.55 eV, while (BA) 2 SnX 4 exhibits values of 1.53, 1.98, and 2.49 eV, for X = I, Br, and Cl, respectively. In particular, the estimated effective masses of electrons/holes in 2D-(BA) 2 GeX 4 and (BA) 2 SnX 4 are 0.15–0.23/0.16–0.27 m e and 0.14–0.18/0.14–0.19 m h at Γ–X and 0.16–0.29/0.12–0.14 m e and 0.22–0.35/0.12–0.14 m h at Γ–Y, respectively, about half of those in BA 2 PbI 4 and BA 2 PbBr 4 . Furthermore, the density of states (DOS) and partial DOS results suggest that the contributions to the valence and conduction band are mostly made by the components of halogen p state orbitals and metal p state orbitals, respectively. Furthermore, the band-decomposed charge densities of the conduction band minimum and valence band maximum results imply that the distorted inorganic [GeX 6 ] 4– and [SnX 6 ] 4– octahedra have a direct influence on the band gaps. Our results indicate that this series of homologous 2D tin and germanium halide perovskites are a promising class of stable and efficient light-absorbing materials for photovoltaic and/or photoelectronic applications.
Source: openalex_inverted_index · Quality: baseline
Affiliations
School of Science, Xi’an University of Architecture and Technology, Xi’an, Shaanxi 710055, China
State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
School of Physics and Optoelectronic Engineering, Ludong University, Yantai, Shandong 264025, China
Funding
Natural Science Foundation of Shaanxi Province · Open-Foundation of Key Laboratory of Laser Device Technology, China North Industries Group Corporation Limited · Fund of State Key Laboratory of IPOC (BUPT)