Surface Charge Transfer Doping of III–V Nanostructures

Surface charge transfer is presented as an effective doping technique for III–V nanostructures. We generalize that the technique is applicable to nanoscale semiconductors in the limit where carriers are quantum confined. As a proof-of-concept, potassium surface charge transfer doping is carried out for one-dimensional (1D) and two-dimensional (2D) InAs on Si/SiO 2 substrates. Experiments and simulations show that equivalent dopant areal dose of up to ∼2 × 10 12 cm –2 is obtained, which is sufficient for degenerate doping of InAs nanostructures. This work presents a new pathway for controllable doping of inorganic semiconductors with limits fundamentally different from those of substitutional doping.