Unintended Deviation of Fermi Level from Band Edge in Fractal Silicon Nanostructures: Consequence of Dopants’ Zonal Depletion
Source abstract
Abstract
The location of Fermi level in a semiconductor is of utmost importance, thus understanding its relative drift from the expected location contains a lot of technologically significant information. A fabrication process induced spatial deviation in the Fermi level position has been reported here in silicon quantum structures prepared using chemical etching. Experimental (direct) and theoretical Raman spectroscopy analyses (indirect) reveal low dopant concentration in the nanosilicon, which explains several reports on its low conductivity. An experimental dopant mass migration based hypothesis (similar to the zone melting process), duly validated using Raman spectroscopy, has been used to explain the observed phenomenon.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Nanowire Synthesis and Applications · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Materials and Device Laboratory, Discipline of Physics, Indian Institute of Technology Indore, Simrol, Indore 453552, India
Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta T6G 2G2, Canada
Centre for Advanced Electronics, Indian Institute of Technology Indore, Simrol, Indore 453552, India
Funding
Council??of??Scientific and Industrial Research, India · Science and Engineering Research Board · Department of Science and Technology, Ministry of Science and Technology, India
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