Photoluminescence of Graphene Oxide Infiltrated into Mesoporous Silicon
Source abstract
Abstract
Graphene oxide (GO) is a photoluminescent material whose application in optoelectronics has been strongly limited due to its poor emission intensity. In this work, a GO–porous silicon (GO–PSi) hybrid structure is realized in order to investigate the emission properties of GO infiltrated into a porous matrix. GO–PSi is characterized by Fourier transform infrared spectroscopy, spectroscopic reflectometry, and steady-state photoluminescence. A photoluminescence enhancement by a factor of 2.5 with respect to GO deposited on a flat silicon surface is demonstrated. Photoluminescence measurements also show a modulation of the emitted signal; this effect is attributed to the interference phenomena occurring inside the PSi monolayer.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · Graphene and Nanomaterials Applications · Carbon and Quantum Dots Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute for Microelectronics and Microsystems, and ‡Institute for Polymers, Composites and Biomaterials, National Council of Research, Naples, Italy
Department of Pharmacy, University of Naples Federico II, Naples, Italy
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