Optoelectronic characterization of microcrystalline silicon films

The optoelectronic properties of μc-Si films produced in different ways are studied by contactless transient photoconductivity measurements in the microwave frequency range. A strong charge carrier trapping is observed in most μc-Si films. The effective mobility determined from these measurements appears to be an appropriate parameter to characterize these films. The films show a high absorption at 1064 nm, tentatively attributed mainly to defect absorption.