Analytical model of Fowler–Nordheim tunnel injection for design and simulation of complex memories circuits
Source abstract
Abstract
Abstract We propose a new compact analytical model of Fowler–Nordheim injection current including depletion and quantum oscillations effects for design and simulation of complex memory circuits. This model is able to simulate the Fowler–Nordheim injection current whatever the source and the well of the injection in the metal oxide silicon transistor with very low errors and low time cost.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (11)
Show source-provided references
1. Pavan · Proc. IEEE. · 1997 · 8510.1109/5.622505 ↗
2. Tsividis · 1988
3. S. Keenney et al., IEDM Tech. Dig. 8.7.1 (1990) 201
4. Sze · 1981
5. Esaki · Proc. IEEE · 1974 · 62 · 82510.1109/PROC.1974.9522 ↗
6. Abramowitz · 1985
7. Moll · 1964
8. Dahlke · Solid State Electron. · 1967 · 1010.1016/0038-1101(67)90169-4 ↗
9. E.H. Wichmann, Berkeley Physics Course, vol. 4, 1971
10. Lezlinger · J. Appl. Phys. · 1969 · 40 · 27810.1063/1.1657043 ↗
11. T. Yao et al., Cellule mémoire non-volatile électriquement programmable et effaçable, Br. Français no. 99.15815, 15 December 1999