journal article·1991

Influence of nonradiative and nongeminate processes on a lifetime distribution of photoexcited carriers in amorphous semiconductors at low temperatures

S.D. Baranovskii, Rosari Saleh, P. Thomas, H. Vaupel, H. Fritzsche

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Glass properties and applications · Phase-change materials and chalcogenides

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References (10)

Show source-provided references
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3. Shkovskii · Phys. Rev. Lett. · 1989 · 62 · 298910.1103/PhysRevLett.62.2989 ↗
4. S.D. Baranovskii and E.I. Levin, to be published.
5. Tsang · Phil. Mag. · 1978 · B37 · 60110.1080/01418637808226454 ↗
6. Dunstan · Phil. Mag. · 1985 · B52 · 11110.1080/01418638508244275 ↗
7. Searle · Phil. Mag. Lett. · 1990 · 61 · 25110.1080/09500839008202367 ↗
8. Abdukadirov · Sov. Phys. Semicond. · 1990 · 24 · 82
9. E.I. Levin, S. Marianer, B.I. Shklovskii and h. Fritzsche, Luminiscence lifetime distribution in amorphous semiconductors, this volume.
10. Tsang · Phys. Rev. · 1979 · B19 · 302710.1103/PhysRevB.19.3027 ↗