Dependence of a-Sl:H/Si3N4 interface properties on the deposition sequence in amorphous silicon thin film transistor produced by remote PECVD process
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Abstract
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Semiconductor materials and devices
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References (7)
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1. Fountain · J. Vac. Sci. Technol. · 1989 · A7 · 57610.1116/1.575892 ↗
2. Yang · Phys. Rev. · 1989 · B39 · 380110.1103/PhysRevB.39.3801 ↗
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4. Chao · J. Vac. Sci. Technol. · 1986 · A4 · 157410.1116/1.573510 ↗
5. Locovsky · J. Vac. Sci. Technol. · 1989 · A7 · 113610.1116/1.576242 ↗
6. Kim · J. Vac. Sci. Technol. · 1988 · A6 · 174010.1116/1.575283 ↗
7. Device Electronics for Integrated Circuits