Modification of the tunneling barrier in a nanocrystalline silicon single-electron transistor
Source abstract
Abstract
Abstract Single-electron transistors (SETs) consisting of side-gated nanowires fabricated in 20-nm-thick hydrogenated nanocrystalline silicon films prepared at 300 °C have been investigated. It is found that if the nanowire width is
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Research context
OpenAlex topics: Quantum and electron transport phenomena · Nanowire Synthesis and Applications · Semiconductor materials and devices
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References (16)
Show source-provided references
1. Kastner · Nature · 1997 · 389 · 66710.1038/39450 ↗
2. Ferry · 1997
3. Single Charge Tunnelling, Coulomb Blockade Phenomena in Nanostructures
4. Ono · Jpn. J. Appl. Phys. · 2000 · 39 · 232510.1143/JJAP.39.2325 ↗
5. Kuramachi · Appl. Phys. Lett. · 1997 · 71 · 165510.1063/1.120075 ↗
6. Stangl · J. Vac. Sci. Technol. B · 2000 · 18 · 218710.1116/1.1303736 ↗
7. Kamiya · J. Non-Cryst. Solids · 2000 · 266–269 · 12010.1016/S0022-3093(99)00765-6 ↗
8. Matsuura · Solar Energy Mater. Solar Cells · 2001 · 66 · 30510.1016/S0927-0248(00)00188-4 ↗
9. Tan · Appl. Phys. Lett. · 2001 · 78 · 108310.1063/1.1350428 ↗
10. Kamiya · J. Appl. Phys. · 2001 · 89 · 626510.1063/1.1368164 ↗
11. Tan · J. Appl. Phys. · 2001 · 89 · 126210.1063/1.1331338 ↗
12. VLSI Technology
13. Liu · Appl. Phys. Lett. · 1994 · 64 · 138310.1063/1.111914 ↗
14. Torres · Appl. Phys. Lett. · 1996 · 69 · 137310.1063/1.117440 ↗
15. Kamei · Mater. Res. Soc. Symp. Proc. · 2001 · 664 · A10.1.1
16. Janssen · Phys. Rev. B · 1999 · 60 · 1356110.1103/PhysRevB.60.13561 ↗