journal article·1995-07

Leakage current reduction due to hot carrier effects in n-channel polycrystalline silicon thin film transistors

G. Tallarida, A. Pecora, G. Fortunato, F. Plais, P. Legagneux, T. Kretz, D. Pribat

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design

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References (10)

Show source-provided references
1. Fortunato · IEEE Trans. Electron Dev. · 1994 · 41 · 34010.1109/16.275218 ↗
2. Hofmann · IEEE Trans. Electron Dev. ED-32 · 1985 · 69110.1109/T-ED.1985.22000 ↗
3. Pribat · Rev. Techn. Thomson-CSF · 1994 · 26 · 73
4. Kretz · 1994 · Vol. 37&36 · 311
5. Jiang · Jpn. J. Appl. Phys. · 1992 · 31 · L140410.1143/JJAP.31.L1404 ↗
6. Plais · 1994 · Vol. 345
7. Weber · IEEE Trans. Electron Dev. · 1988 · 35 · 147610.1109/16.2580 ↗
8. Tanaka · 1990 · 1011
9. Schwerin · IEEE Trans. Electron Dev. · 1987 · 34 · 249310.1109/T-ED.1987.23340 ↗
10. Lai · Appl. Phys. Lett. · 1981 · 39 · 5810.1063/1.92514 ↗