Generation and annealing kinetics of current induced metastable defects in amorphous silicon alloys

Abstract Large, rapid changes in the conductivity of hydrogenated amorphous silicon alloy metal–semiconductor–metal thin film diodes following current stressing have been reported. A model relating the change of current through a diode with defect generation and stressing current is shown to be in agreement with experiment. By using current induced conductivity as a means to monitor defect formation we show that the rate of defect production and annealing in silicon-rich a-Si 1− x C x :H is much faster than it is in a-Si 1− x N x :H with a similar band gap. Further, the generation rate is dependent on band gap while the annealing rate is not. From measurements of the attempt to escape frequency, ν , we conclude that the defects in a-Si 1− x N x :H are similar to those in a-Si:H but in a-Si 1− x C x :H the dominant defect is different and probably related to weak bonding configurations involving carbon.