journal article·1985-12

The determination of characteristic parameters by the temperature dependent field-effect in a-Si:H thin film transistors

R.E.I. Schropp, G.J.M. Brouwer, J.F. Verwey

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (11)

Show source-provided references
1. Kagawa · Phys. Rev. · 1983 · B28 · 457010.1103/PhysRevB.28.4570 ↗
2. A.O. Harm, R.E.I. Schropp and J.F. Verwey, to be printed in Phil. Mag. B.
3. Staebler · J. Appl. Phys. · 1980 · 51 · 326210.1063/1.328084 ↗
4. Spear · J. Non-Cryst. Solids · 1972 · 8–10 · 72710.1016/0022-3093(72)90220-7 ↗
5. Magariño · Phil. Mag. · 1982 · B45 · 28510.1080/13642818208246405 ↗
6. Powell · Appl. Phys. Lett. · 1984 · 45 · 17110.1063/1.95158 ↗
7. R.E.I. Schropp, J.W.C. Veltkamp, J. Snijder and J.F. Verwey, to be printed in IEEE Trans. Electr. Dev.
8. Grünewald · Phys. Stat. Sol. (b) · 1982 · 100 · K139
9. Yamaguchi · J. Appl. Phys. · 1984 · 56 · 230310.1063/1.334264 ↗
10. Spear · Phil. Mag. · 1979 · B41 · 419
11. Wagner · J. Non-Cryst. Solids · 1983 · 59 & 60 · 41310.1016/0022-3093(83)90608-7 ↗