journal article·1987-12

Charge trapping effects in amorphous silicon/silicon nitride thin film transistors

A.R. Hepburn, C. Main, J.M. Marshall, C. van Berkel, M.J. Powell

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor materials and devices · Silicon Nanostructures and Photoluminescence

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References (9)

Show source-provided references
1. Powell · Appl. Phys. Lett. · 1983 · Vol. 43 · 59710.1063/1.94399 ↗
2. Ast · IEEE Trans. Elec. Dev. · 1983 · Vol. ED-30 · 53210.1109/T-ED.1983.21162 ↗
3. Hepburn · Phys. Rev. Lett. · 1986 · Vol. 56 · 221510.1103/PhysRevLett.56.2215 ↗
4. Powell, M.J., van Berkel, C. and French, I.D., “this volume,”.
5. Schropp · Appl. Phys. Lett. · 1987 · Vol. 50 · 18510.1063/1.97656 ↗
6. Abkowitz · J. App. Phys. · 1987 · Vol. 61 · 103810.1063/1.338195 ↗
7. Hepburn, A.R., Marshall, J.M., Main, C., van Berkel, C. and Powell, M.J., to be published,, 1987.
8. Street · Appl. Phys. Lett. · 1986 · Vol. 48 · 167210.1063/1.96851 ↗
9. Iqbal · J. Appl. Phys. · 1987 · Vol. 61 · 294710.1063/1.337842 ↗