Thin film detector for color recognition: an experimental and numerical study

Abstract We investigated the performance of color sensitive p–i–i–i–n diodes based on amorphous silicon. The detectors are developed with respect to the μτ (carrier mobility × lifetime) product and the band gap of the individual i-layers resulting in a voltage controlled spectral sensitivity. Since the linear independence of the spectral response and a linear response of the photocurrent on the incident light intensity is a prerequisite for the generation of a red–green–blue (RGB) signal, the effect of additional bias illumination on the spectral sensitivity is measured. To gain insight into the optoelectronic properties of these devices we carried out numerical simulations and compared them with experimentally determined spectral sensitivities.