Processes of vapor phase growth of AIIBVI single crystals and structures based there upon

Abstract Results of investigations of semiconductor AIIBVI compounds (for example of CdTe and ZnTe) grown by the chemical vapor transport (CVT) method in a closed volume using three transfer agents containing a halogen, compound NH4X (X = Cl, Br, I) are presented. The processes of vapor phase growth (composition of the vapor phase and mass transfer) in Me(Cd, Zn)Te–NH4X (X = Cl, Br, I) systems have been calculated theoretically and the results are have been verified in growth experiments. Optoelectronic properties of the grown materials and barrier structures based there upon are discussed.