A comparison of SiSiO2 interface trap properties in thin-film transistors with thermal and plasma nitrided oxides
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (23)
Show source-provided references
1. Ito · IEEE Trans. Electron. Devices ED-29 · 1982 · 49810.1109/T-ED.1982.20732 ↗
2. Lai · 1983 · 190
3. Terry · IEEE Electron Device Lett. EDL-4 · 1983 · 19110.1109/EDL.1983.25700 ↗
4. Hori · IEEE Trans. Electron Devices ED-34 · 1987 · 223810.1109/T-ED.1987.23226 ↗
5. Gunn · Appl. Phys. Lett. · 1988 · 52 · 171310.1063/1.99711 ↗
6. Debenest · Appl. Surf. Sci. · 1989 · 36 · 19610.1016/0169-4332(89)90914-8 ↗
7. Balland · Thin Solid Films · 1990 · 190 · 10310.1016/0040-6090(90)90133-X ↗
8. Plossu · 1992 · 284 · 325
9. Hori · IEEE Trans. Electron. Device Lett. EDL-7 · 1986 · 66910.1109/EDL.1986.26514 ↗
10. Hori · IEEE Electron Device Lett. EDL-9 · 1988 · 16810.1109/55.678 ↗
11. Piot · 1991
12. Emrani · J. Appl. Phys. · 1993 · 73 · 524110.1063/1.353753 ↗
13. Thirion · 1994
14. Piot · 1989 · 366
15. Saks · IEEE Electron Device Lett. · 1990 · 11 · 33910.1109/55.57927 ↗
16. Groeseneken · IEEE Trans. Electron Devices · 1984 · 31 · 4210.1109/T-ED.1984.21472 ↗
17. M. Berenguer, A. Straboni and B. Vuillermoz, European patent EP0142450 (1984).
18. Saks · J. Appl. Phys. · 1992 · 71 · 441510.1063/1.350781 ↗
19. Autran · J. Appl. Phys. · 1993 · 74 · 393210.1063/1.354493 ↗
20. Autran · Rev. Sci. Instrum. · 1994 · 65 · 214110.1063/1.1144713 ↗
21. Autran · 1994
22. Saks · J. Appl. Phys. · 1993 · 74 · 330310.1063/1.354553 ↗
23. Klausmann · 1989