Radiation-induced defect formation in chalcogenide glasses
Source abstract
Abstract
Abstract The modified model of native and radiation-induced microvoid-type positron traps in vitreous chalcogenide semiconductors is developed to explain compositional features of positron annihilation lifetime measurements in stoichiometric As2S3–GeS2 and non-stoichiometric As2S3–Ge2S3 chalcogenide glasses before and after γ-irradiation.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Glass properties and applications · Phase-change materials and chalcogenides · Luminescence Properties of Advanced Materials
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References (11)
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