A new type of switching and memory effect in semiconductor-dielectric thin film junction
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Advanced Memory and Neural Computing · Thin-Film Transistor Technologies
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References (15)
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1. Ovshinsky · Phys. Rev. Letters · 1968 · 21 · 145010.1103/PhysRevLett.21.1450 ↗
2. Kolomiets · Soviet Phys.-Semiconductors · 1969 · 2 · 621
3. Kikuchi · Appl. Phys. Letters · 1969 · 15 · 32310.1063/1.1652843 ↗
4. Park · J. Non-Crystalline Solids · 1970 · 2 · 28410.1016/0022-3093(70)90145-6 ↗
5. Hovel · Appl. Phys. Letters · 1970 · 17 · 14110.1063/1.1653340 ↗
6. Hickmott · J. Appl. Phys. · 1963 · 33 · 266910.1063/1.1702530 ↗
7. Hamakawa · 1970 · 40 · 80
8. K. Takahashi, private communication.
9. M. Kikuchi, M. Saito and H. Okushi, private communication.
10. H. Okushi, M. Saito and M. Kikuchi, private communication.
11. Takahashi · J. Appl. Phys. · 1971 · 42 · 300910.1063/1.1660669 ↗
12. Fatuzzo · Phys. Rev. · 1960 · 127 · 203610.1103/PhysRev.127.2036 ↗
13. Yoshida · Fall meeting of Japan. Appl. Phys. Soc. · 1970
14. Hickmott · Solid-State Electron · 1970 · 13 · 103310.1016/0038-1101(70)90100-0 ↗
15. M. Yoshida, K. Yamanaka and Y. Hamakawa, Annual Meeting of Japan. Appl. Phys. Soc. 2a-F-13.