High performance a-Si TFT with ITO/n+ ohmic layer using a Ni-silicide
Source abstract
Abstract
Abstract We have studied Ni-silicide contact between a heavily doped hydrogenated amorphous silicon (n+a-Si:H) and a conducting indium tin oxide (ITO) for a high performance, a-Si:H thin-film transistor (TFT). An inverted staggered a-Si:H TFT having a thin Ni-silicide has a field-effect mobility of 1.48 cm2/Vs. The TFT performance was improved by inserting a Ni-silicide layer, which is due to the reduced contact resistance between ITO and n+a-Si:H.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies
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References (11)
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