Pulsed laser crystallization and doping for thin film transistors
Source abstract
Abstract
Abstract Pulsed excimer-laser processing of amorphous silicon on non-crystalline substrates allows the creation of new materials and devices. In this paper, we review (1) fabrication of polysilicon thin film transistors (TFTs) on glass substrates, (2) integration of polysilicon and amorphous silicon devices on the same glass substrate and (3) formation of self-aligned contacts for amorphous silicon thin-film transistors via laser doping.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (27)
Show source-provided references
1. Cody · Solar Cells · 1980 · 2 · 22710.1016/0379-6787(80)90028-9 ↗
2. Giust · IEEE EDL · 1999 · 20 · 7710.1109/55.740657 ↗
3. J.L. Kaschmitter, J.B. Truher, K.H. Weiner, T.W. Sigmon, US Patent 5346850, 1994
4. T. Tanaka, H. Asuma, K. Ogawa, Y. Shinagawa, K. Ono, N. Konishi, in: International Electron Devices Meeting 1993, Technical Digest, 1993, p. 389
5. K.H. Weiner, PhD thesis, Stanford University, June 1989
6. Pippert · Proc. SPIE · 1997 · 3184 · 13810.1117/12.280567 ↗
7. Boyce · Mater. Res. Soc. Proc. · 1996 · 403 · 30510.1557/PROC-403-305 ↗
8. Asai · Jpn. J. Appl. Phys. · 1993 · 32 · 47410.1143/JJAP.32.474 ↗
9. Brotherton · Solid State Phen. · 1994 · 37&38 · 29910.4028/www.scientific.net/SSP.37-38.299 ↗
10. Boyce · Phys. Stat. Sol. · 1998 · 166 · 72910.1002/(SICI)1521-396X(199804)166:2<729::AID-PSSA729>3.0.CO;2-1 ↗
11. Kim · Mater. Res. Symp. Proc. · 1993 · 283 · 70310.1557/PROC-283-703 ↗
12. Fluxman · GEC J. Res. · 1993 · 11 · 2
13. D.L. Smith, D.K. Fork, R.L. Thornton, A.S. Alimonda, C.L. Chua, C. Dunnrowicz, J. Ho, in: Proceedings of the 46th Electronic Components and Technology, vol. 35, 1998
14. Jackson · Phy. Rev. B · 1990 · 41 · 105910.1103/PhysRevB.41.1059 ↗
15. Mei · Appl. Phys. Lett. · 1994 · 64 · 113210.1063/1.110829 ↗
16. K. Shimizu, O. Sugiura, M. Matsumura, Jpn. J. Appl. Phys. Part 2 (Letters), 29 (1990) L1775–710.1143/JJAP.29.L1775 ↗
17. Mei · Mater. Res. Symp. Proc. · 1998 · 507 · 310.1557/PROC-507-3 ↗
18. Wolf · 1986
19. Mei · Electrochem. Soc. Proc. · 1995 · 94-35 · 92
20. Forgarassy · Appl. Surf. Sci. · 1993 · 69 · 23110.1016/0169-4332(93)90510-I ↗
21. Carey · Appl. Surf. Sci. · 1989 · 43 · 32510.1016/0169-4332(89)90234-1 ↗
22. P. Mei, R.A. Lujan, J.B. Boyce, US patent 5871826, 1999
23. Kodera · Jpn. J. Appl. Phys. · 1963 · 53 · 3702
24. Mei · Electrochem. Soc. Proc. · 1997 · 96-23 · 51
25. P. Mei, J.P. Lu, C. Chua, J. Ho, Y. Wang, J.B. Boyce, Mater. Res. Soc. Proc. (1999), to be published
26. J.P. Lu, P. Mei, R. Lujan, J.B. Boyce, in: Proc. 4th Symp. on Thin Film Transistor Technologies, Boston, MA, Nov. 1988, published 1999, p. 392
27. J.P. Lu, P. Mei, C. Chua, J. Ho, Y. Wang, J.B. Boyce, R. Lujan, Mater. Res. Soc. Proc. (1999), to be published