Is there avalanche multiplication in amorphous semiconductors?
Source abstract
Abstract
Abstract A model of the avalanche carrier multiplication in amorphous materials is suggested. The model is based on the concept of sub-gap impact ionization controlled by thermally assisted dissociation of generated geminate pairs of carriers. The obtained results explain an experimentally observed positive temperature dependence of the avalanche multiplication factor in amorphous selenium.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Glass properties and applications · Thin-Film Transistor Technologies · Phase-change materials and chalcogenides
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References (6)
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