Low photo-leakage current amorphous silicon thin film transistor with a thin active layer
Source abstract
Abstract
Abstract We developed a novel etch stopper (ES) hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) with an ultra-thin active layer. The photo-leakage currents of an ES a-Si:H TFT under back-light are smaller when the optical absorption in the a-Si:H is smaller. The field-effect mobility, subthreshold slope, and on/off current ratio of the TFT were 1 cm 2 /Vs, 0.54 V/dec, and ∼10 7 , respectively.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies
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References (12)
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