journal article·1993-12

Fabrication and performance of thin film transistors, TFTs, incorporating doped μc-Si source and drain contacts, and boron-compensated μc-Si channel layers

S.S. He, M.J. Williams, D.J. Stephens, G. Lucovsky

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence

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References (10)

Show source-provided references
1. Suzuki · 1991 · 77
2. Mimura · IEEE Trans. on Electron Devices · 1989 · 36 · 35110.1109/16.19936 ↗
3. Unagami · IEEE Trans. on electron Devices · 1989 · 36 · 52910.1109/16.19964 ↗
4. Spear · J. Physique · 1981 · 42 · 257
5. Lucovsky · 1992 · 283 · 443
6. He · 1992 · 284 · 413
7. He · 1992 · 282 · 505
8. Lucovsky · 1992 · 284 · 34
9. Lucovsky · J. Vac. Sci. Technol. · 1992 · A10 · 202510.1116/1.578019 ↗
10. Chen · J. Vac. Sci. Technol. · 1992 · A10 · 87410.1116/1.577687 ↗