journal article·1996-05

Creation of interface states between SiO2 and a-Si:H in a-Si:H thin film transistors by bias-stress

Sung Ki Kim, Keun Soo Lee, Jin Jang

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Surface Roughness and Optical Measurements

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (11)

Show source-provided references
1. Powell · IEEE Trans. Electron Devices · 1989 · 36 · 275310.1109/16.40933 ↗
2. Kim · Appl. Phys. Lett. · 1994 · 64 · 77510.1063/1.111009 ↗
3. Deane · 1994 · 336 · 757
4. Sameshima · Jpn. J. Appl. Phys. · 1994 · 33 · L83410.1143/JJAP.33.L834 ↗
5. Shur · J. Appl. Phys. · 1984 · 55 · 383110.1063/1.332893 ↗
6. Wronski · Phys. Rev. · 1987 · B23 · 794
7. Fortunato · J. Appl. Phys. · 1990 · 68 · 246310.1063/1.346507 ↗
8. Nickel · Philos. Mag. · 1990 · B61 · 25110.1080/13642819008205524 ↗
9. van Berkel · Appl. Phys. Lett. · 1987 · 51 · 109410.1063/1.98751 ↗
10. Carluccio · J. Non-Cryst. Solids · 1993 · 164–166 · 75110.1016/0022-3093(93)91106-D ↗
11. Bae · Philos. Mag. · 1992 · 65 · 93310.1080/13642819208217911 ↗