Impedance study of the electrical properties of poly-Si thin film transistors

The aim of this work is to study the electrical characteristics of polycrystalline silicon (poly-Si) thin film transistors (TFTs) using spectroscopic impedance technique, where the poly-Si active layer was obtained by metal induced crystallization of amorphous silicon. From the study performed a theoretical model that fitted the impedance data is proposed, in order to obtain the separate contributions of each region that constitutes the TFT namely the channel, non accumulated region and contacts.