Zinc oxide incorporated indium tungsten oxide amorphous thin films for thin film transistors applications

Abstract Zinc oxide (ZnO), indium tungsten oxide (IWO), and ZnO incorporated indium tungsten oxide (ZIWO) thin films (thickness ~ 10 nm) have been fabricated at room temperature by radio-frequency (RF) magnetron sputtering to study their physical and chemical properties for development of high performance and stable thin film transistors. The study reveals that ZnO incorporation with IWO resulted amorphous, smooth and better quality of thin films in comparison to the zinc oxide and indium tungsten oxide. Furthermore, the fabricated ZIWO thin film transistor exhibits a good device performance with field-effect mobility (μFE) of 26.80 cm2/Vs, threshold voltage (Vth) of 0.62 V, sub-threshold swing (SS) of 0.39 V/decade, and positive biased stress shifting (∆Vth) of +0.82 V than the IWO (conducting in nature) and ZnO (μFE ~ 1.95 cm2/Vs, Vth ~ 14.40 V, SS ~ 1.68 V/decade, ∆Vth of +4.20 V) TFTs counterparts.