Ambipolar a-SiGe:H thin-film transistors fabricated at 200 °C
Source abstract
Abstract
In this paper, we study the ambipolar behavior of a-SiGe:H thin-film transistors fabricated at 200 °C. A subthreshold slope and an on/off current ratio of 0.34 V/DEC and 10 5, respectively, were measured for the n-type region, whereas values of 0.15 V/DEC and 10 4 for were measured for the p-type region. We also obtained the characteristic energies for the deep localized states of the a-SiGe:H film, the flat-band voltages, and threshold voltages among other device parameters for the ambipolar thin-film transistors.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Nanowire Synthesis and Applications · Advancements in Semiconductor Devices and Circuit Design
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References (14)
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