Enhancement of photoluminescence in SiC N nanoparticle films by addition of a Ni buffer layer

Abstract This work reports the effect of the presence of a Ni buffer layer on the photoluminescence (PL) of SiC x N y nanoparticle films prepared by RF plasma magnetron sputtering process in a reactive N 2 + Ar + H 2 gas mixture. An introduction of a Ni buffer of 80 nm or thicker remarkably improves the PL of the films. Annealing in a temperature range of 400–1100 °C is found to significantly affect the PL intensity. Optimal PL is achievable at 600 °C. X-ray photoelectron and Fourier-transform infrared spectroscopy suggest that the strong PL is directly related to the composition of the SiC x N y nanoparticle and the concentration of Si–O, and Si–N bonds. The results are relevant to the development of wide bandgap optoelectronic devices.