Characteristics of heteroepitaxial Cu2−Mn O/Nb–SrTiO3 p–n junction

Abstract Mn-doped cuprous oxide Cu2−xMnxO (CMO), where x = 0.03, is a p-type diluted magnetic semiconductor (DMS) with Curie temperature above room temperature [M. Wei, N. Braddon, et al., Appl. Phys. Lett. 86 (2005) 0725141; Y.L. Liu, S. Harrington, et al., Appl. Phys. Lett. 87 (2005) 222108]. We have grown CMO (x = 0.03) thin films of about 200 nm thick on n-type semiconducting (0 0 1)Nb–SrTiO3(NSTO) single crystal substrates by pulsed laser deposition. Cubic crystalline phases of CMO layers were obtained in a narrow deposition pressure window of about 20 mTorr at growth temperature of 650 °C. X-ray diffraction and TEM studies of these heterostructures reveal a cube-on-cube epitaxial relationship of [CMO]001/[NSTO]001. All the oxide p–n junctions with the size of 500 × 500 μm were fabricated by the shadow masking technique. These junctions show highly asymmetric I–V characteristics. The rectification ratio at room temperature is about 103 at ±2 V. Leakage current density of 10−4 A cm−2 at −1 V is observed. No apparent junction breakdown is recorded at reverse bias voltages down to −5 V. From the 1/C2–V plots, the forward bias turn on voltage is ∼1.4 V. Clear junction current rectifying property is maintained at up to 200 °C. Our results have demonstrated that epitaxial CMO films can be fabricated on lattice matched cubic substrates. They are suitable DMS for above room temperature spintronic junction applications.