Fabrication of amorphous silicon thin-film transistor by micro imprint lithography

Abstract We studied ultraviolet micro imprint lithography (UV-MIL) for the manufacture of amorphous silicon (a-Si) thin-film transistors (TFTs) using a master mold. A teflon amorphous fluoropolymer produced by rotary vacuum evaporation was used to detach the imprint resist from a master mold. To remove the residual resist layer, the sample was dipped in acetone and then dry etched by reactive ion etching. The a-Si TFT having 10 μm channel length produced by UV-MIL exhibited a field-effect mobility of 1.2 cm 2 /V s, threshold voltage of 1.9 V and on/off current ratio of 10 8 .