Influence of crystalline volume fraction on the performance of high mobility microcrystalline silicon thin-film transistors

Abstract The influence of the crystalline volume fraction of hydrogenated microcrystalline silicon on the device performance of thin-film transistors fabricated at temperatures below 200 °C was investigated. Transistors employing microcrystalline silicon channel material prepared close to the transition to amorphous growth regime exhibit the highest charge carrier mobilities exceeding 50 cm2/V s. The device parameters like the charge carrier mobility, the threshold voltage and the subthreshold slope will be discussed with respect to the crystalline volume fraction of the intrinsic microcrystalline silicon material.