journal article·1995-07

Room-temperature deposition of SiNx using ECR-PECVD for semiconductor microelectronics in lift-off technique

A. Wiersch, C. Heedt, S. Schneiders, R. Tilders, F. Buchali, W. Kuebart, W. Prost, F.J. Tegude

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Abstract

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Research context

OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · GaN-based semiconductor devices and materials

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References (13)

Show source-provided references
1. Matsuo · 1982
2. Matsuo · 1988
3. Dun · J. Electrochem. Soc. · 1981 · 128 · 155510.1149/1.2127682 ↗
4. Jeon · J. Appl. Phys. · 1991 · 75 · 97910.1063/1.356455 ↗
5. Newson · Electron. Lett. · 1993 · 29 · 47210.1049/el:19930316 ↗
6. Hu · Appl. Phys. Lett. · 1993 · 63 · 111310.1063/1.109797 ↗
7. Claasen · J. Electrochem. Soc. · 1983 · 130 · 241910.1149/1.2119600 ↗
8. Hicks · 1991 · 11 · 455
9. Boudreau · Can. J. Phys. · 1992 · 70 · 140410.1139/p92-178 ↗
10. Pai · J. Vac. Sci. Technol. · 1986 · A4 · 68910.1116/1.573833 ↗
11. Harrus · Semicond. Int. · 1990 · 124
12. Heedt · 1992 · 238
13. Trew · IEEE Electron Dev. Lett. · 1991 · 12 · 52410.1109/55.119177 ↗