The barrier–cluster model applied to chalcogenide glasses
Source abstract
Abstract
Abstract The aim of this article is to familiarize the readers with barrier–cluster model of the non-crystalline semiconductors, which is based on the assumption that in non-crystalline semiconductors, there exist micro-regions separated from each other by potential barriers. We suppose that these micro-regions in chalcogenide glasses are created by closed clusters. This model allows explanation not only of a number of important optical and electrical features of chalcogenide glasses, but also the results of X-ray structure measurements and ESR experiments. This concept gives a new look at the density of states within the forbidden band and at the exponential tails of the optical absorption.
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Glass properties and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (44)
Show source-provided references
1. Mott · 1979
2. Brodsky · 1979
3. B.T. Kolomijec, in: Conference of Amorphous Semiconductors 78, Pardubice, 1978, p. 3.
4. Non-Crystalline Chalcogenides
5. Adriesh · Moldavian J. Phys. Sci. · 2003 · 2 · 246
6. 2004 · vol. 78
7. Ležal · 1988
8. Overhof · J. Non-Cryst. Solids · 1998 · 227–230 · 1510.1016/S0022-3093(98)00020-9 ↗
9. Y. Hamakawa (Ed.), Amorphous Semiconductor – Technologies and Devices, North-Holland, Amsterdam, New York, Oxford, OHM, Tokyo-Osaka-Kyoto, 1983 (Amorfnyje poluprovodniky i pribory na ich osnove, ed. S.S. Gorelika, Metalurgia, Moskva, (1986)).
10. Adriesh · J. Optoelectron. Adv. Mater. · 2002 · 4 · 63
11. A. Popescu. Photoinduced phenomenon and elements for integrated optics based on non-crystalline chalcogenide semiconductors, Ed.: Chisinau, 2003.
12. 2003
13. Anderson · Phys. Rev. Lett. · 1975 · 34 · 95310.1103/PhysRevLett.34.953 ↗
14. Street · Phys. Rev. Lett. · 1975 · 35 · 129310.1103/PhysRevLett.35.1293 ↗
15. Kastner · Phys. Rev. Lett. · 1976 · 37 · 150410.1103/PhysRevLett.37.1504 ↗
16. Adrieanssens · J. Optoelectron. Adv. Mater. · 2002 · 4 · 837
17. T.F. Mazec, S.K. Pavlov, M. Závetová, V. Vorlíček, in: Conference of Amorphous Semiconductors 78, vol. 1, Pardubice, 1978, p. 432.
18. Kozuikhin · J. Non-Cryst. Solids · 2006 · 352 · 154710.1016/j.jnoncrysol.2006.02.011 ↗
19. Street · J. Phys. C: Solid State Phys. · 1974 · 7 · 158210.1088/0022-3719/7/8/022 ↗
20. Červinka · J. Non-Cryst. Solids · 1988 · 106 · 29110.1016/0022-3093(88)90277-3 ↗
21. Tanaka · J. Optoelectron. Adv. Mater. · 2001 · 3 · 189
22. Popescu · J. Optoelectron. Adv. Mater. · 2004 · 6 · 1147
23. Lorinczi · Chalcogenide Lett. · 2005 · 2 · 1
24. M. Popescu, Conference of Amorphous Semiconductors 78, vol. 1, Pardubice, 1978, p. 185.
25. Zamfira · Chalcogenide Lett. · 2005 · 2 · 55
26. Popescu · Chalcogenide Lett. · 2004 · 1 · 111
27. Banik · CEJP · 2005 · 3 · 270
28. I. Banik, CEJP, submitted for publication.
29. I. Banik, in: Proceedings of the 15th Conference of Slovak and Czech. Physicists, Košice, 2006, p. 45.
30. I. Banik, in: Proceedings of the Nineth International Workshop APCOM 2003, Malá Lučivná, 2003, p. 32.
31. I. Banik, in: Proceedings of the Conference TVV 2006, Olomouc, Votobia Prag, 2006, p. 361.
32. I. Banik, in: Proceedings of the Conference TTV 2005, Olomouc, Votobia Prag, 2005, p. 414.
33. I. Banik, in: Proceedings of the Conference Research on UT SR, Nitra, SUA Nitra, 2005, p. 14.
34. I. Baník, in: Conference on Physical and Material Engineering, Richňava, 2003, p. 179.
35. I. Baník, Didmattech 03, VOTOBIA, Olomouc, 2003, p. 88.
36. Baník · Czech. J. Phys. B · 1974 · 24 · 111410.1007/BF01586816 ↗
37. I. Banik, in: Proceedings of the FCE SUT, SUT, Bratislava, 1983, p. 221.
38. I. Baník, in: Proceedings of the Amorphous Semiconductors 78, Pardubice, 1978, p. 529.
39. I. Baník, in: Proceedings of the Seventh Conference Czech–Slov. Physicist, Prague, 1981, p. 5.
40. I. Baník, in: Proceedings of the Fifth Conference Czech. Phys., Košice, 1977, p. 643.
41. I. Banik, The transport properties of amorphous semiconductors in high electric fields (in slovak), SVŠT-SUT, Bratislava, 1975.
42. Baník · Czech. J. Phys. B · 1975 · 25 · 55210.1007/BF01589429 ↗
43. Baník · Čs. čas. fyz. A · 1976 · 26 · 496
44. I. Baník, Electrical and optical properties of non-crystalline semiconductors under normal and high pressure, SUT Bratislava, 2002.