journal article·1980-01

Variation of semiconductor properties through the SiOx region of Si  SiO2 interfaces

K. Hübner

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Silicon Nanostructures and Photoluminescence · Thermography and Photoacoustic Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (10)

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1. Hübner · 1979 · 10
2. Hübner · 1978 · 111
3. H.G. Neumann, R. Engelke, and K. Hübner, to be published.
4. Hübner · phys. stat. sol. (a) · 1979 · 53 · K7910.1002/pssa.2210530171 ↗
5. Hübner · phys. stat. sol. (a) · 1977 · 42 · 50110.1002/pssa.2210420211 ↗
6. Bechstedt · phys. stat. sol. (b) · 1979 · 91 · 16710.1002/pssb.2220910117 ↗
7. K. Hübner and F. Bechstedt, phys. stat. sol. (b), in the press.
8. G. Zuther, K. Hübner, and E. Rogmann, Thin Solid Films, in the press.
9. Hübner · phys. stat. sol. (a) · 1979 · 52 · 54110.1002/pssa.2210520222 ↗
10. Hübner · phys. stat. sol. (b) · 1979 · 9410.1002/pssb.2220940148 ↗