journal article·2000-05

Anisotropy in the transport of microcrystalline silicon

T. Unold, R. Brüggemann, J.P. Kleider, C. Longeaud

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Abstract

We have measured the transport properties of several microcrystalline silicon films prepared by hot-wire chemical vapour deposition (HWCVD). The photocurrent measurements indicate an anisotropy in the optoelectronic properties of the material. We have investigated the defect structure in the samples by modulated and transient photocurrent, constant photocurrent method, and capacitance spectroscopy. The results indicate spatial inhomogeneities in the distribution of defects. A likely distribution of defects is proposed which can consistently explain the results from the different measurements.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor Quantum Structures and Devices · Nanowire Synthesis and Applications

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