Digital lithography for large-area electronics on flexible substrates

Abstract Hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) were fabricated at growth temperatures no greater than 150 °C. The transistor device performance was comparable to conventional high-temperature processed devices. Typical field-effect mobility for these low-temperature devices were ∼1 cm2/V s, on–off ratios of >108, and sub-threshold slopes of 0.5 V/decade were measured. The low-temperature process allowed the integration of the TFTs with flexible polymeric substrates. Device fabrication for these devices was performed using jet-printed etch masks in place of photolithography. The devices fabricated on the flexible substrates using jet printing were comparable to devices fabricated on glass.