journal article·1998-05

Minimization of dangling bond defects in hydrogenated silicon nitride dielectrics for thin film transistors (TFTs)

G Lucovsky, J.C Phillips

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor materials and devices · Silicon Nanostructures and Photoluminescence

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References (13)

Show source-provided references
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10. X. Feng, W.J. Bresser, P. Boolchand, submitted to Phys. Rev. Lett., 1997.
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12. Yasuda · Appl. Phys. Lett. · 1992 · 60 · 43410.1063/1.106626 ↗
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