Effect of Ge concentration on optical properties of films synthesized by vacuum-thermal evaporation of glassy Ge–Se alloys
Source abstract
Abstract
Four non-crystalline Ge xSe 100− x ( x = 15−25 at. %) films were obtained by vacuum-thermal deposition of glassy Ge–Se alloys. With the use of spectroscopic ellipsometry, it was determined that the films are semiconductors with indirect band gap energy E g = 2.0−2.07 eV. An anomalous dispersion of the refractive index n (λ) with n max at λ max depending on x was revealed in the films at λ = 240−500 nm. It was established that as the concentration of Ge decreases, n max increases, and λ max red shifts. Based on the Wemple-DiDomenico model, the nonlinear coefficients χ (3) and n 2 characterizing the synthesized films were calculated as a function of x. The highest χ (3) and n 2 values are achieved in the films at x = 15 at. %. The results obtained can be used for the development and creation of Ge–Se optical filters with an adjustable blue absorption band edge.
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Nonlinear Optical Materials Studies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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