journal article·1992-11

Back-bias effect on the current-voltage characteristics of amorphous silicon thin-film transistors

Y. Kaneko, K. Tsutsui, T. Tsukada

Journal of Non-Crystalline Solids· Volume 149· Issue 3
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (10)

Show source-provided references
1. Kaneko · IEEE Trans. Electron Devices · 1989 · 36 · 295310.1109/16.40962 ↗
2. Kaneko · Appl. Phys. Lett. · 1990 · 56 · 65010.1063/1.102726 ↗
3. LeComber · J. Non-Cryst. Solids · 1989 · 115 · 110.1016/0022-3093(89)90346-3 ↗
4. Credelle · 1988 · 208
5. Ogawa · 1990 · 1039
6. Tuan · IEEE Electron Device Lett. · 1982 · EDL-3 · 35710.1109/EDL.1982.25599 ↗
7. Sasano · J. Non-Cryst. Solids · 1987 · 97&98 · 129510.1016/0022-3093(87)90310-3 ↗
8. Sze · 1981
9. Kaneko · J. Appl. Phys. · 1991 · 69 · 730110.1063/1.347577 ↗
10. Leroux · Solid-State Electron. · 1986 · 29 · 4710.1016/0038-1101(86)90197-8 ↗