journal article·1998-05

Preparation of field effect transistor using nano-crystalline GaN

S. Kobayashi, S. Nonomura, K. Abe, K. Ushikoshi, S. Nitta

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Thin-Film Transistor Technologies

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References (9)

Show source-provided references
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5. Khan · Appl. Phys. Lett. · 1993 · 62 · 178610.1063/1.109549 ↗
6. Khan · Appl. Phys. Lett. · 1995 · 67 · 142910.1063/1.114516 ↗
7. Clough · Mater. Res. Soc. Symp. Proc. · 1996 · 423 · 3910.1557/PROC-423-39 ↗
8. Nakamura · Jpn. J. Appl. Phys. · 1991 · 30 · L199810.1143/JJAP.30.L1998 ↗
9. Kim · J. Appl. Phys. · 1997 · 82 · 21910.1063/1.365801 ↗