Preparation of field effect transistor using nano-crystalline GaN
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Abstract
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Thin-Film Transistor Technologies
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References (9)
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1. Kobayashi · Appl. Surf. Sci. · 1997 · 113 · 48010.1016/S0169-4332(96)00872-0 ↗
2. Kobayashi · Mater. Res. Soc. Symp. Proc. · 1997 · 467 · 37310.1557/PROC-467-373 ↗
3. Tsukada · Oyobuturi · 1996 · 65 · 1014
4. Khan · Mater. Res. Soc. Symp. Proc. · 1994 · 339 · 16310.1557/PROC-339-163 ↗
5. Khan · Appl. Phys. Lett. · 1993 · 62 · 178610.1063/1.109549 ↗
6. Khan · Appl. Phys. Lett. · 1995 · 67 · 142910.1063/1.114516 ↗
7. Clough · Mater. Res. Soc. Symp. Proc. · 1996 · 423 · 3910.1557/PROC-423-39 ↗
8. Nakamura · Jpn. J. Appl. Phys. · 1991 · 30 · L199810.1143/JJAP.30.L1998 ↗
9. Kim · J. Appl. Phys. · 1997 · 82 · 21910.1063/1.365801 ↗