A model for an amorphous semiconductor memory device
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Abstract
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Thin-Film Transistor Technologies · Metallic Glasses and Amorphous Alloys
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References (5)
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1. Ovshinsky · Phys. Rev. Letters · 1968 · 21 · 145010.1103/PhysRevLett.21.1450 ↗
2. Neale · J. Non-Crystalline Solids · 1970 · 2 · 55810.1016/0022-3093(70)90169-9 ↗
3. R. G. Neale, D. L. Nelson and Gordon E. Moore, A 256-Bit, Diode Isolated Semiconductor Read-Mostly Memory, presented at the Symposium on Electrotechnical Glasses on Sept. 30, 1970 at Imperial College, London.
4. Sie · J. Non-Crystalline Solids · 1972 · 8–10 · 884
5. Scher · J. Chem. Phys. · 1970