InO semiconductor films deposited on glass substrates for transparent electronics

Abstract Transparent undoped semiconductor indium oxide films were deposited by radio frequency (rf) plasma enhanced reactive thermal evaporation (rf-PERTE) of indium at low substrate temperature. It was experimentally verified that the variation of rf power density has a strong influence on the electrical and structural properties of the films. The thickness of the InO x films is of about 100 nm. Results show that InO x films show an average visible transmittance of about 85% and energy gap of about 2.6 eV. Structural and electrical conductivity measurements show that films are polycrystalline and there exists a linear variation of conductivity logarithm vs reciprocal of temperature. Electrical conductivity variation of 17.6 to 5.8 × 10 −3 (Ω cm) −1 for films produced at rf power densities ranging from 3.9 to 78.1 mW cm −3 was obtained. This controllable semiconductor behavior can therefore satisfy the requirement of a particular application for these type of films.